PART |
Description |
Maker |
SML10SIC06Y |
SILICON CARBIDE (SiC) SCHOTTKY DIODE
|
Seme LAB
|
IDD08SG60C |
3rd Generation thinQ!TM SiC Schottky Diode 8 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-252
|
Infineon Technologies AG
|
LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
C3D03060A |
Silicon Carbide Schottky Diode 600-Volt Schottky Rectifier
|
Cree, Inc
|
STPSC606 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
APTDC30H601G |
30 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE SiC Diode Full Bridge Power Module
|
MICROSEMI POWER PRODUCTS GROUP Microsemi Corporation
|
C4D08120A |
Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier
|
Cree, Inc
|
C4D05120A |
Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier
|
Cree, Inc
|
C3D04065A-15 |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
SDT12S60 Q67040-S4470 |
Silicon Carbide Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
C4D05120E |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
C3D10065I |
Silicon Carbide Schottky Diode
|
Cree, Inc
|